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1

A comprehensive review of ZnO materials and devices

Ozgur, U., Alivov, Ya. I., Liu, C., Teke, A., Reshchikov, M. A., Dogan, S., Avrutin, V., Cho, S.-J., Morkoc, H.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 3.26 MB

english, 2005

2

Luminescence properties of defects in ZnO

M.A. Reshchikov, H. Morkoç, B. Nemeth, J. Nause, J. Xie, B. Hertog, A. Osinsky

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 171 KB

english, 2007

3

Photoluminescence from structural defects in GaN

M.A Reshchikov, J Jasinski, Z Liliental-Weber, D Huang, L He, P Visconti, H Morkoç

Journal:

Physica B: Condensed Matter

Year:

2003

Language:

english

File:

PDF, 261 KB

english, 2003

4

[Semiconductors and Semimetals] Defects in Semiconductors Volume 91 || Point Defects in GaN

Reshchikov, Michael A.

Year:

2015

Language:

english

File:

PDF, 5.30 MB

english, 2015

5

A new species of Cylloceria Schiødte, 1838 (Hymenoptera, Ichneumonidae) from the Oriental Region

LIU, JING-XIAN, RESHCHIKOV, ALEXEY

Journal:

Year:

2019

Language:

english

File:

PDF, 5.93 MB

english, 2019

6

Defect-Related Luminescence in Undoped GaN Grown by HVPE

Reshchikov, M.A., Usikov, A., Helava, H., Makarov, Yu.

Journal:

Journal of Electronic Materials

Year:

2015

Language:

english

File:

PDF, 628 KB

english, 2015

7

Unstable luminescence in GaN and ZnO

M.A. Reshchikov, Y.T. Moon, X. Gu, B. Nemeth, J. Nause, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

8

Characterization of GaN and InxGa1−xN films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

K. S. Ramaiah, D. Huang, M. A. Reshchikov, F. Yun, H. Morkoç, J. Jasinski, Z. Liliental-Weber, C. Sone, S. S. Park, K. Y. Lee

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2003

Language:

english

File:

PDF, 1.72 MB

english, 2003

9

Effect of Capping on Electrical and Optical Properties of GaN Layers Grown by HVPE

Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Puzyk, M. V., Papchenko, B. P.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.01 MB

english, 2016

10

Luminescence properties of defects in GaN

Reshchikov, Michael A., Morkoc, Hadis

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 2.36 MB

english, 2005

11

Band bending near the surface in GaN as detected by a charge sensitive probe

Sabuktagin, S., Reshchikov, M. A., Johnstone, D. K., Morkoç, H.

Journal:

MRS Proceedings

Year:

2003

Language:

english

File:

PDF, 174 KB

english, 2003

12

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

McNamara, J. D., Foussekis, M. A., Baski, A. A., Li, X., Avrutin, V., Morkoç, H., Leach, J. H., Paskova, T., Udwary, K., Preble, E., Reshchikov, M. A.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 284 KB

english, 2013

13

Excitons bound to surface defects in GaN

Reshchikov, M. A., Huang, D., Morkoç, H.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 188 KB

english, 2002

14

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Surface photovoltage in heavily doped GaN:Si,Zn

McNamara, J. D., Behrends, A., Mohajerani, M. S., Bakin, A., Waag, A., Baski, A. A., Reshchikov, M. A.

Year:

2014

Language:

english

File:

PDF, 390 KB

english, 2014

15

Photoluminescence and Excitation Spectra of Deep Defects in GaN

Reshchikov, Michael A., Molnar, Richard J., Morkoç, Hadis

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

16

Microstructures of GaN and InxGa1-xN Films Grown by MOCVD on freestanding GaN Templates

Jasinski, J., Liliental-Weber, Z., Huang, D., Reshchikov, M. A., Yun, F., Morkoç, H., Sone, C., Park, S. S., Lee, K. Y.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 585 KB

english, 2002

17

Synthesis and antileukemic activity of ara-cytidylyl[5′→ 5′ ]-6-methylpurine riboside

E. I. Kvasyuk, T. I. Kulak, I. A. Mikhailopulo, V. P. Reshchikov, N. M. Fertukova

Journal:

Pharmaceutical Chemistry Journal

Year:

1984

Language:

english

File:

PDF, 396 KB

english, 1984

18

Transient photovoltage in GaN as measured by atomic force microscope tip

Reshchikov, M. A., Sabuktagin, S., Johnstone, D. K., Morkoç, H.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 279 KB

english, 2004

19

Low-temperature surface photovoltage in p-type GaN

McNamara, Joy D., Foussekis, Michael, Baski, Alison A., Reshchikov, Michael A.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 912 KB

english, 2014

20

Defect investigation of GaN thin films etched by photo-electrochemical and hot wet etching by atomic force and transmission electron microscopy

Visconti, P., Jones, K. M., Reshchikov, M. A., Cingolani, R., Morkoç, H., Molnar, R. J., Smith, D. J.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 1.92 MB

english, 2001

21

Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy

R.Y Korotkov, M.A Reshchikov, B.W Wessels

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

22

Green luminescence in Mg-doped GaN

Reshchikov, M. A., Demchenko, D. O., McNamara, J. D., Fernández-Garrido, S., Calarco, R.

Journal:

Physical Review B

Year:

2014

Language:

english

File:

PDF, 864 KB

english, 2014

23

Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template

Reshchikov, M. A., Huang, D., Yun, F., He, L., Morkoç, H., Reynolds, D. C., Park, S. S., Lee, K. Y.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 241 KB

english, 2001

24

Characterization of very low defect-density free-standing GaN Substrate Grown by Hydride-Vapor-Phase-Epitaxy.

Visconti, P., Reshchikov, M. A., Jones, K. M., Yun, F., Cingolani, R., Morkoç, H., Jasinski, J., Swider, W., Liliental-Weber, Z., Park, S. S., Lee, K. Y.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 707 KB

english, 2001

25

Surface-Related Photoluminescence Effects in GaN

Reshchikov, M. A., Iqbal, M. Zafar, Huang, D., He, L., Morkoç, H.

Journal:

MRS Proceedings

Year:

2002

Language:

english

File:

PDF, 176 KB

english, 2002

26

Mechanisms of Thermal Quenching of DefectâRelated Luminescence in Semiconductors

Reshchikov, Michael A.

Journal:

physica status solidi (a)

Year:

2020

File:

PDF, 848 KB

2020

27

A Comparative Study of MBE-Grown GaN Films Having Predominantly Ga- or N-Polarity

F. Yun, D. Huang, M.A. Reshchikov, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, P. Visconti, H. Morkoç

Journal:

physica status solidi (b)

Year:

2001

Language:

english

File:

PDF, 318 KB

english, 2001

28

Evaluation of GaN by photoluminescence measurement

Michael A. Reshchikov

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 267 KB

english, 2011

29

A study of some biochemical and biophysical characteristics of a subpopulation of rat thymocytes isolated in a ficoll gradient

E. A. Zherbin, K. P. Khanson, V. I. Vashchenko, A. M. Reshchikov, A. Yu. Sungurov, A. B. Chukhlovin

Journal:

Bulletin of Experimental Biology and Medicine

Year:

1981

Language:

english

File:

PDF, 264 KB

english, 1981

30

Optical characteristics of 1.18-eV luminescence band complexes inn-GaAs:Sn(Si): Results of a photoluminescence study with polarized resonant excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov, T. Piotrowski, J. Pultorak

Journal:

Year:

1998

Language:

english

File:

PDF, 152 KB

english, 1998

31

Transient photoluminescence of defect transitions in freestanding GaN

Reshchikov, M. A., Morkoç, H., Park, S. S., Lee, K. Y.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 303 KB

english, 2001

32

Determination of GaN polarity on periodically oriented surfaces

Ferguson, Josephus D., Reshchikov, Michael A., Baski, Alison A., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 1.24 MB

english, 2015

33

Review of North European species of the genus Lathrolestes (Hymenoptera, Ichneumonidae) with description of one new species from Öland (Sweden)

RESHCHIKOV, ALEXEY

Journal:

Year:

2015

Language:

english

File:

PDF, 28.41 MB

english, 2015

34

Blue luminescence and Zn acceptor in GaN

Demchenko, D. O., Reshchikov, M. A.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 1013 KB

english, 2013

35

Properties of Al[sub x]Ga[sub 1−x]N layers grown by plasma-assisted molecular-beam epitaxy under Ga-rich conditions

L. He, M. A. Reshchikov, F. Yun, D. Huang, T. King, H. Morkoç

Year:

2002

Language:

english

File:

PDF, 297 KB

english, 2002

36

Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy

M. A. Reshchikov, P. Visconti, H. Morkoç

Year:

2001

Language:

english

File:

PDF, 310 KB

english, 2001

37

Photoluminescence and Raman spectra in Ga-doped ZnO layers on sapphire

Reshchikov, Michael A., Nagata, S., Xie, J., Hertog, B., Osinsky, A.

Journal:

MRS Proceedings

Year:

2007

Language:

english

File:

PDF, 424 KB

english, 2007

38

Photoluminescence from ZnO nanowires

M. A. Reshchikov, A. Behrends, A. Bakin, A. Waag

Year:

2009

Language:

english

File:

PDF, 680 KB

english, 2009

39

Excitons bound to structural defects in GaN

Reshchikov, M. A., Huang, D., Yun, F., Morkoç, H., Molnar, R. J., Litton, C. W.

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 752 KB

english, 2001

40

Stenope, a new euphorine genus from the Philippines (Hymenoptera: Braconidae)

VAN ACHTERBERG, CORNELIS, ANG, YUCHEN, RESHCHIKOV, ALEXEY, YUE, QI

Journal:

Year:

2018

Language:

english

File:

PDF, 2.14 MB

english, 2018

41

New records of the genus Clistopyga Gravenhorst, 1829 (Hymenoptera: Ichneumonidae: Pimplinae) from the Oriental region, with description of a new species

VARGA, OLEKSANDR, RESHCHIKOV, ALEXEY

Journal:

Year:

2015

Language:

english

File:

PDF, 3.69 MB

english, 2015

42

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers

D. Huang, P. Visconti, M.A. Reshchikov, F. Yun, T. King, A.A. Baski, C.W. Litton, J. Jasinski, Z. Liliental-Weber, H. Morkoç

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 115 KB

english, 2001

43

Anomalous shifts of blue and yellow luminescence bands in MBE-grown ZnO films

M.A. Reshchikov, V. Avrutin, N. Izyumskaya, R. Shimada, H. Morkoç

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

44

Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy

D. Huang, F. Yun, M.A. Reshchikov, D. Wang, H. Morkoç, D.L. Rode, L.A. Farina, Ç. Kurdak, K.T. Tsen, S.S. Park, K.Y. Lee

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 180 KB

english, 2001

45

Comparison of the polarizations of the 1.2-eV photoluminescence band inn-GaAs:Te under uniaxial pressure and resonance polarized excitation

A. A. Gutkin, M. A. Reshchikov, V. E. Sedov

Journal:

Year:

2000

Language:

english

File:

PDF, 85 KB

english, 2000

46

Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films

Reshchikov, M. A., Korotkov, R. Y.

Journal:

Physical Review B

Year:

2001

Language:

english

File:

PDF, 140 KB

english, 2001

47

Dislocation density in GaN determined by photoelectrochemical and hot-wet etching

Visconti, P., Jones, K. M., Reshchikov, M. A., Cingolani, R., Morkoç, H., Molnar, R. J.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 568 KB

english, 2000

48

Two-step thermal quenching of photoluminescence in Zn-doped GaN

Reshchikov, Michael A.

Journal:

Physical Review B

Year:

2012

Language:

english

File:

PDF, 1.07 MB

english, 2012

49

Comparative study of Ga- and N-polar GaN films grown on sapphire substrates by molecular beam epitaxy

D. Huang, M. A. Reshchikov, P. Visconti, F. Yun, A. A. Baski, T. King, H. MorkocÌ§, J. Jasinski, Z. Liliental-weber, C. W. Litton

Year:

2002

Language:

english

File:

PDF, 1.14 MB

english, 2002

50

Thermal transport of charge and polarization of 1.2-eV luminescence broad band in uniaxially strainedn-GaAs:Te

A. A. Gutkin, M. A. Reshchikov

Journal:

Year:

2003

Language:

english

File:

PDF, 72 KB

english, 2003

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